1. Resource Type
  2. Journal Article
  3. Investigation of GaAs and AlAs atomic-layer epitaxial growth mechanism based on experimental results and first-principles total energy calculation

Investigation of GaAs and AlAs atomic-layer epitaxial growth mechanism based on experimental results and first-principles total energy calculation

Permalink : http://repository.center.wakayama-u.ac.jp/4323
ID 4323
FullText File
jjap.59.SGGK16.pdf 1000 KB
Authors
Ohtsuka, Nobuyuki
ODA, Masato Faculty of Systems Engineering 和歌山大学研究者総覧
ESHITA, Takashi Center for Innovative and Joint Research 和歌山大学研究者総覧
TANAKA, Ichiro Faculty of Systems Engineering
ITOH, Chihiro Faculty of Systems Engineering 和歌山大学研究者総覧 researchmap
Journal Title
Japanese Journal of Applied Physics
ISSN
13474065
NCID
AA12295836
Volume
59
Issue
SG
Start Page
SGGK16-1
End Page
SGGK16-4
Published Date
2020-02-28
Language
eng
Content Type
Journal Article
Text Version
author
rights
This is an author-created, un-copyedited version of an article published in [Japanese Journal of Applied Physics]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [10.35848/1347-4065/ab6e07].
Related URL
https://doi.org/10.35848/1347-4065/ab6e07